Differences Between MOSFET and IGBT

• In the low-current region, the conduction voltage of a MOSFET is lower than that of an IGBT, which is its advantage. However, in the high-current region, the forward voltage characteristics of an IGBT are superior to those of a MOSFET. IGBTs are suitable for conduction and control in medium to extremely high current applications, while MOSFETs are suitable for low to medium current applications.
• IGBTs are not suitable for high-frequency applications; they operate well at frequencies in the kilohertz (kHz) range. MOSFETs are particularly suitable for extremely high-frequency applications and can operate well in the megahertz (MHz) range.
• Typically, the rated voltage of MOSFETs is around 600Vwhile IGBTs can achieve the rated voltages up to 1400V. IGBTs are suitable for handling very high voltage and power while MOSFETs are only applicable to low-to-medium voltage applications.
• IGBTs have a longer turn-off timewhile MOSFETs have a shorter turn-off time.
• IGBTs can handleany transient voltages and currents but MOSFETs’ operation would be disrupted under transient voltage conditions.
• IGBTs are suitable for high-power AC applications while MOSFETs are suitable for low-power DC applications.
• MOSFET devices are low-cost and inexpensivewhile IGBTs remain relatively high-cost.

MOSFETs are particularly suitable for high-frequency switching applications, As a power switch, the MOSFETs selected should have extremely low on-resistance, low input capacitance (i.e., Miller capacitance) and extremely high gate breakdown voltage—sufficient to handle any voltage spikes induced by inductance. Additionally, the parasitic inductance between the drain and source electrode should be minimized, as lower parasitic inductance reduces voltage spikes during switching. These advantages make MOSFETs ideal for high-frequency applications requiring fast switching speeds.

In contrast, IGBTs have slower switching speeds and longer turn-off times, making them unsuitable for high-frequency applications. The main advantages of IGBTs lie in their ability to handle and conduct medium to ultra-high voltages and currents, their excellent gate insulation characteristics and their extremely low forward voltage drop during current conduction—even when surge voltages occur, IGBT operation remains unaffected.