Product Details

SiC Module - SYSM008S120TPKG1

Packaging

Circuit Diagram

M2

 

Features:                                                                          

⚫Low Drain-Source On-Resistance: RDS(ON)=8.9mΩ (typ.)                                                                                       

⚫Easy to Control Gate Switching                                                                                            

⚫Enhancement Mode: Vth = 1.8 to 4.0V
 

Applications:

⚫Very Low RDS(on) Over the Entire Temperature Range

⚫High Speed Switching Performances

⚫Very Fast and Robust Intrinsic Body Diode

⚫Source Sensing Pin For Increased Efficiency

⚫Main Inverter (Electric Traction)

 

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