Product Details

IGBT Module - A Series - SYSM008S120TPKG1

Packaging

Circuit Diagram

M2

 

Features:                                                                          

⚫Low drain-source on-resistance: RDS(ON)=8.9mΩ (typ.)                                                                             

⚫Easy to control Gate switching                                                                                         

⚫Enhancement mode: Vth = 1.8 to 4.0V

 

Applications:

⚫Very low RDS(on) over the entire temperature range

⚫High speed switching performances

⚫Very fast and robust intrinsic body diode

⚫Source sensing pin for increased efficiency

⚫Main inverter (electric traction)

 

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